Navitas Semiconductor has expanded its portfolio of SiCPAK power modules with new 1,200-V devices that feature epoxy-resin potting and proprietary trench-assisted planar SiC MOSFET technologies. These ...
Navitas Semiconductor’s latest 3,300- and 2,300-V ultra-high-voltage (UHV) silicon-carbide (SiC) devices are available in power module, discrete, and known-good-die (KGD) formats. They target ...
A new class of medium-voltage power modules has been introduced to support next-generation energy infrastructure, offering ...
Shenzhen Kehua, a reliable EV charging equipment provider and a subsidiary of Kehua Group, showcased its full turnkey EV ...
KYOTO, Japan, March 12, 2026 /PRNewswire/ -- ROHM Co., Ltd. has begun online sales of new SiC molded modules: TRCDRIVE pack (TM), HSDIP20 and DOT-247. Amid growing concerns over tightening global ...
SemiQ Inc. expanded its family of 1,200-V Gen3 silicon-carbide (SiC) MOSFETs with five SOT-227 modules that offer on-resistance (R DS(on)) values of 7.4, 14.5, and 34 mΩ. The GCMS modules, which ...
Navitas Semiconductor has announced the launch of its new SiCPAK™ power modules, which utilize innovative epoxy-resin potting technology alongside proprietary trench-assisted planar SiC MOSFET ...
Addressing two of the major barriers for electric vehicle (EV) adoption, charging time and the range a vehicle can travel before charging, onsemi has announced the APM32 series of silicon-carbide- ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will enter into a strategic partnership with Nexperia B.V. to jointly develop silicon carbide (SiC) power ...
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