Gallium nitride (GaN) power stages - TI.com
Our family of gallium nitride (GaN) FETs with integrated gate drivers and GaN power devices offers the most efficient GaN solution with lifetime reliability and cost advantages. GaN transistors switch much …
GaN transistors (GaN HEMTs) | Infineon Technologies
Get an overview of Infineon’s GaN transistors Infineon’s gallium nitride (GaN) transistors are available in voltage ranges from 60 V up to 700 V. The fast turn-on and turn-off speeds with minimal switching …
Advanced-650V-GaN-Power-Module-for-Next-Generation-Power-...
Dynex Semiconductor has announced the development of a new 450A, 650V Gallium Nitride (GaN) half-bridge power module, designed to deliver ultra-fast switching performance, high efficiency, and …
GaN Power Devices | Discrete Semiconductors - Rohm
GaN Power Devices GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It is beginning to see adoption due to its superior properties over silicon …
GaN Power Discretes | Renesas
Discover Renesas' Gallium Nitride (GaN) Power Discretes, offering unmatched efficiency, reliability, and performance across applications from 25W to 10+kW. Simplify designs with versatile packaging and …
GaN Power ICs - STMicroelectronics
The high voltage power converters is enriched by the introduction of GaN HEMT (high-electron-mobility transistor) technology. The use of a GaN transistor leads to higher power density, higher efficiency, …
onsemi to Develop Next-Generation GaN Power Devices with ...
Dec 18, 2025 · This collaboration accelerates onsemi’s roadmap for high-performance GaN devices and integrated power stages, expanding its portfolio with high-voltage products to meet the growing …
Dynex Develops 450 A, 650 V GaN Power Module for High-Density Power …
1 day ago · Dynex Semiconductor has announced the development of a new 450 A, 650 V gallium nitride (GaN) half-bridge power module designed to deliver ultra-fast switching performance, high …
Power Module Design for GaN Transistors Enabling High Switching Speed in Multi-Kilowatt Applications Dennis Wöhrle,* Bruno Burger, and Oliver Ambacher The advantages of gallium nitride and silicon …
A Review of High-Speed GaN Power Modules: State of the Art, …
Dec 26, 2022 · Moreover, it provides a review of commercially available gallium nitride-based high electron mobility transistors (GaN HEMTs) and state-of-the-art module packaging technologies …